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FANUC Series 20 A20B-3900-0052

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A20B-3900-0052

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The FANUC A20B-3900-0052 is a memory plug-in module specialized for CNC machines. This module features an SRAM memory type with a capacity of 512K.

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Ships from Raleigh, NC
2 Year DO Supply Warranty
Not an Authorized Distributor: DO Supply is not an authorized distributor for listed manufacturers or tradenames and therefore the manufacturer's warranty does not apply. All of our products come with DO Supply's 2-year warranty.
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Technical specifications for A20B-3900-0052

ManufacturerFANUC
Product LineSeries 20
Part NumberA20B-3900-0052
Weight2.19 lbs (0.99 kg)
ProductMemory Plug In Module
Memory TypeSRAM
Memory Capacity512K
UseCNC Machines
Maximum Ambient Temperature60 degrees Celsius
Minimum Ambient Temperature0 degrees Celsius
Operating Humidity80% RH (non-condensing)
Storage Humidity80% RH (non-condensing)
Maximum Operating Altitude Without Derating1000 meters above sea level
Protection ClassIP20
CertificationsCE

The A20B-3900-0052 from FANUC is designed as a plug-in memory module for CNC machines. It utilizes static RAM (SRAM) technology, ensuring reliable data storage and quick access speeds. This module has a memory capacity of 512K, making it suitable for various CNC applications.

Weighing in at 1 kg, it is manageable for installation within machines. The device is rated for an ambient temperature range of 0 °C to 60°C, allowing it to operate in various environments without overheating. Additionally, it can handle relative humidity levels of up to 80% without condensation, which contributes to its functionality in industrial settings.

The protection class of this module is IP20, indicating that it is protected against solid objects larger than 12.5 mm but not against liquids or other substances. It is certified according to CE standards, highlighting its compliance with European safety regulations. The module can also be utilized effectively at altitudes of up to 1000 meters above sea level without performance degradation, making it adaptable for different geographic locations.