QM200HA2H

The Mitsubishi QM200HA2H is categorized as a high-power switching transistor, notable for its capacity to manage heavy electrical demands. This component supports a collector current of up to 200A, allowing it to handle significant operational loads effectively. The transistor operates within a collector-emitter voltage threshold of 1000V, enabling it to function safely in various applications. Designed with durability in mind, the QM200HA2H is rated for junction temperatures that can range from -40°C to +150°C, which broadens its usability in diverse settings, including extreme conditions.

In terms of performance, the transistor exhibits a peak surge collector reverse current of 2000A at 60Hz, alongside a DC current gain (hFE) measured at 75. This characteristic ensures reliable performance during rapid load changes. For those scenarios where energy dissipation is a concern, the QM200HA2H can handle a collector dissipation of 1560W when operating at a moderate temperature of 25°C. With a base current rating of up to 10A, this transistor facilitates significant switching capabilities. The voltage ratings include a maximum of 7V across the emitter-base junction and a collector-base voltage of 1000V.

For safety during use, the transistor features an isolation voltage of 2500V when subjected to AC for one minute. Additionally, its storage temperature can be safely maintained between -40°C and +125°C. Overall, the QM200HA2H high-power switching transistor offers a combination of strength and versatility, responsible for reliable electrical performance across various demanding industrial applications.