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Mitsubishi Other CM200DU-24F

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CM200DU-24F

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The Mitsubishi CM200DU-24F is a high-power switching IGBT module engineered for demanding applications. This component boasts a collector-emitter voltage of 1200 V and can handle a collector current of 200 A, ensuring robust performance.

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Technical specifications for CM200DU-24F

ManufacturerMitsubishi
Product TypeHigh-Power Switching IGBT Module
Product LineOther
Part NumberCM200DU-24F
External Gate Resistance Max.16 Ω
Collector-Emitter Voltage1200 V
Collector Current200 A
Maximum Collector Dissipation830 W
Isolation Voltage2500 V
Torque Strength3.5 ~ 4.5 N.m
Collector Cutoff Current1 mA
Max. Gate-Emitter Threshold Voltage7 V
Gate Leakage Current40 µA
Input Capacitance78 nF
Output Capacitance3.4 nF
Turn-On Delay Time300 ns
Turn-On Rise Time80 ns
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The CM200DU-24F from Mitsubishi is a high-performance IGBT module that serves as a critical component in various power electronic applications. With a maximum collector-emitter voltage of 1200 V, it supports substantial voltage operations efficiently. Each module is designed to accommodate a collector current of up to 200 A, making it suitable for high-power applications.

This module is compact, weighing only 0.88 lbs, which facilitates integration into space-constrained designs. The external gate resistance can reach up to 16 Ω, optimizing control characteristics during operation.

The CM200DU-24F features a maximum collector dissipation of 830 W, ensuring effective heat management under heavy load conditions. Its isolation voltage of 2500 V provides added security against electrical faults, making it a reliable choice for system integration.

For precise performance, the module has a collector cutoff current specified at 1 mA. It also includes a maximum gate-emitter threshold voltage of 7 V and a gate leakage current of 40 µA, which ensures stable operation across various switching environments.

Capacitance characteristics include an input capacitance of 78 nF and an output capacitance of 3.4 nF, which contribute to its effective switching behavior. The turn-on delay time of 300 ns and a rise time of 80 ns further underscore its fast-switching capabilities, making it ideal for high-frequency operations.