STR1200

The part number STR1200 from Yaskawa identifies a robust IGBT module designed for efficient power control. This dual module features an advanced Insulated Gate Bipolar Transistor (IGBT) design, which allows for significant performance enhancements in various applications.

With an impressive collector-emitter voltage capability of 1400 volts and a collector current rating of 400 amperes, it is built to handle high power demands effectively. The module's operation is guided by a gate threshold voltage of between 4.5 and 6.5 volts, ensuring precise control during operation.

The STR1200's switching characteristics are noteworthy, with a turn-on time of 1.5 microseconds and a turn-off time of 3.0 microseconds. Additionally, it offers a high isolation voltage of 2500 V RMS, enhancing safety and reliability. The thermal performance of the module is a key consideration, as it operates within a temperature range of -40°C to +150°C, making it suitable for a variety of environments.

Due to its substantial power levels, a heatsink is necessary to maintain optimal temperatures during operation, which aids in prolonging module life. This IGBT module complies with RoHS regulations and has UL recognition, ensuring it meets important environmental and safety standards. Weighing approximately 0.8 kg, the STR1200 package is designed for versatility in application while maintaining a compact form factor.